Monday, September 29, 2003
Samsung Electronics has developed a 4-Gbit NAND-style flash memory using 70-nanometer advanced manufacturing process technologies, the company reported.
The 4-Gbit NAND flash memory has a memory cell size of 0.025 square microns and includes a 30-nm thick metal gate of tungsten, which reduces inter-cell resistance and noise level. The new tungsten gate to be adaptable to designs at 50-nm processing node, Samsung said.
Samsung said it expects the chip to help it maintain its 65 percent share of the NAND flash market. The company is targeting 70 percent annual growth in NAND flash sales from $1.1 billion in 2002.
By: DocMemory
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