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Elpida samples 1 Gbit DDR chip


Thursday, October 9, 2003
Elpida Memory Inc. announced it has sample a 1-Gbit DDR2 synchronous DRAM fabricated in a 100-nanometer manufacturing process technology.

With the device having a data transfer rate of 533-Mbits/s, Elpida claimed it is the fastest and highest capacity solid-state memory available for server applications.

"One gigabit is the next major milestone for DRAM density and DDR2 is the most advanced DRAM architecture available," said Yukio Sakamoto, president and chief executive officer of Elpida, in a statement. "Elpida's first silicon based on our 0.10 micron process technology was successfully produced at our state-of-the-art 300-mm fab."

The same silicon die can be used to produce DDR and DDR2 components via a metal option, Elpida said.

Elpida's 1-Gbit SDRAMs are intended for use in a number of multi-chip memory modules including 4-Gigabyte registered dual in-line memory modules (DIMMs) for servers and workstations, 2-Gigabyte unbuffered DIMMs for desktops, and 2-Gigabyte small-outline DIMMs (SO-DIMMs) for notebooks, the company said.

Samples of Elpida's 1-Gbit DDR2 SDRAM devices are scheduled to ship in November 2003, with volume shipment projected for early 2004. No timetable was given for memory modules based on the components.

By: DocMemory
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