Tuesday, February 3, 2004
Hynix Semiconductor plans to produce 512-Mbit NAND flash memory chips in volume starting this month, according to a Dow Jones report Tuesday.
The production schedule is a little delay when Hynix and STMicroelectronics had an agreement last April to co-develop flash memories by second-half of 2003.
Hynix said it would use 120-nm manufacturing process to develop the 512-Mbit megabit NAND flash memory, according to the report.
After starting with 512-Mbit devices Hynix aims to produce 1-Gbit and 2-Gbit NAND flash memories by the fourth quarter implemented using a 90-nm manufacturing process and by 2005 Hynix intends to be the third-largest producer of NAND flash memory chips in terms of revenue, the report added.
By: DocMemory
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