Wednesday, March 3, 2004
The National Institute of Advanced Industrial Science and Technology (AIST) has developed a new memory element structure that promises to greatly increase the data storage capacity of MRAM (magnetoresistive random-access memory).
The memory element is the fundamental structure of a memory device, storing the information representing an individual bit of data.
MRAM is a new type of high-speed memory being developed for personal computers and other applications. Data bits are stored as changes in the magnetic direction of the electrons in the memory element.
The AIST's new memory element structure stabilizes the magnetic direction of the electrons, and the result is that an MRAM chip fabricated from such elements could store around 1Gb of data, or 10 times as much as currently possible.
The institutes aims to collaborate with private companies to develop practical applications for this new memory element.
By: DocMemory
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