Tuesday, March 23, 2004
Fujitsu Ltd said it will construct a new facility at its Mie semiconductor plant in central Japan to mass-produce logic chips using state-of-the-art, 90-nanometer (nm) volume process technology as well as next-generation 65nm technology, and employing large-diameter 300mm wafers.
The new facility is scheduled to become operational from April 2005, with volume shipments to commence from September 2005, when demand for 90nm products is expected to intensify. Fujitsu will initially invest about 75 billion yen for the first phase of construction through fiscal 2005, with phase two and subsequent investment to be made in stages and in careful consideration of market demand. Total investment in the facility is expected to reach about 160 billion yen. When fully equipped, the new facility will have a maximum production capacity of 13,000 wafers per month.
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Toshihiko Ono of Fujitsu at the press conference (photo by Chikashi Horikiri)
| Fujitsu's Akiruno Technology Center on the outskirts of Tokyo has focused on leading-edge prototype chip development and volume production using 90nm technology, and since January 2003 it has been shipping 90nm products both internally and to outside customers. The 90nm technology developed at Akiruno incorporates advanced transistor, copper wiring and Low-k technologies that not only provide superior levels of performance, but which Fujitsu has successfully introduced in reference design flow applied in the development of large-scale system-on-chip devices. In addition to use in its own products, Fujitsu's 90nm technology has attracted considerable interest from cutting-edge technology partners in Japan and overseas.
Toshihiko Ono, corporate senior vice president and group president of Fujitsu's Electronic Devices Business Group, commented: "The entire semiconductor industry has taken notice of the 90nm technology that we've developed at Akiruno, and we are determined to further extend our leadership as we move to 65nm and beyond. Investing in this new facility at Mie now will enable us to leverage this strength and fully meet our customers' requirements for quality products, competitive cost and stable volume supply."
"Already more than 10 firms have been evaluating our 90nm technology and discussing partnerships," added Ono.
Along with high-volume fabrication capability, Fujitsu's new facility at Mie also will be equipped to handle small-volume, multi-product batch production. In addition, in line with its "Green Factories" policies, Fujitsu will from the early planning stages incorporate measures to greatly reduce emissions and otherwise minimize the new facility's environmental burden. Moreover, to avoid risk from potential earthquake damage and ensure operational stability for its customers, Fujitsu will be the first in the industry to equip its new fab building with a micro vibration control and seismically isolated structure.
as well as next-generation 65nm technology, and employing large-diameter 300mm wafers.
The new facility is scheduled to become operational from April 2005, with volume shipments to commence from September 2005, when demand for 90nm products is expected to intensify. Fujitsu will initially invest about 75 billion yen for the first phase of construction through fiscal 2005, with phase two and subsequent investment to be made in stages and in careful consideration of market demand. Total investment in the facility is expected to reach about 160 billion yen. When fully equipped, the new facility will have a maximum production capacity of 13,000 wafers per month.
By: DocMemory
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