This compares to a profit of $1.1 million in the previous period, and a deficit of $619.2 million in the like period a year ago.

In the period, Micron posted sales of $991 million, compared to $1.107 billion in the previous period and $785 million a year ago.

Micron blamed the results on several factors. The first quarter of fiscal 2004 was comprised of 14 weeks, while the second quarter of fiscal 2004 was a typical 13-week quarter.

The company's megabit production of memory products in the quarter measured on a weekly basis increased about 5 percent compared to the first quarter of fiscal 2004. Average selling prices for the company's memory products were relatively flat compared to the prior quarter and the corresponding period of the prior fiscal year.

The quarter over quarter megabit production increase was affected, and will likely continue to be affected in the near term, by increased allocations of wafers to the manufacture of CMOS image sensors, pseudo SRAM devices, and flash memory products.

A significant portion of the company's production in the second quarter was based on 110-nanometer process technology, as yields on these devices approached maturity.

While 256-megabit and higher density DRAM products comprised a majority of wafers processed in the period, approximately 20 percent of wafers processed in the second quarter of fiscal 2004 were comprised of lower density and relatively higher margin DRAM memory products

This compares to a profit of $1.1 million in the previous period, and a deficit of $619.2 million in the like period a year ago.

In the period, Micron posted sales of $991 million, compared to $1.107 billion in the previous period and $785 million a year ago.

Micron blamed the results on several factors. The first quarter of fiscal 2004 was comprised of 14 weeks, while the second quarter of fiscal 2004 was a typical 13-week quarter.

The company's megabit production of memory products in the quarter measured on a weekly basis increased about 5 percent compared to the first quarter of fiscal 2004. Average selling prices for the company's memory products were relatively flat compared to the prior quarter and the corresponding period of the prior fiscal year.

The quarter over quarter megabit production increase was affected, and will likely continue to be affected in the near term, by increased allocations of wafers to the manufacture of CMOS image sensors, pseudo SRAM devices, and flash memory products.

A significant portion of the company's production in the second quarter was based on 110-nanometer process technology, as yields on these devices approached maturity.

While 256-megabit and higher density DRAM products comprised a majority of wafers processed in the period, approximately 20 percent of wafers processed in the second quarter of fiscal 2004 were comprised of lower density and relatively higher margin DRAM memory products

By: DocMemory
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