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Samsung ramps DDR2 with 100-nm process


Tuesday, March 30, 2004 Samsung said that it has resolved the issues related with the new advanced 100-nm process and is ramping up products DDR2 chip based on the technology.

Memory chips based on the new 100-nm process are being fabricated in Samsung's 300-mm fab in Hwaseong, South Korea, Quinn said. The new 100-nm process is expected to scale to at least the 65-nm node, enabling Samsung to extend its lead in DRAMs, the company said.

Samsung is shipping 512Mbit DDR2 in volume and 1Gbit DDR2 in samples.

By: DocMemory
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