Monday, April 12, 2004
Toshiba introduced what it claims is the semiconductor industry's first 4Gb single-die, multi-level cell (MLC), NAND flash memory.
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| 4Gb NAND flash memory TC58NVG2D4BFT00 | Fabricated with 90-nanometer process technology, the new chip offers double the capacity of Toshiba's present largest single-die NAND flash memory, and will realize higher capacity flash memory cards capable of supporting a wide range of applications. The new 4Gb NAND flash memory enables faster write performance by implementing advanced design concepts and adjusting the control system of the memory cell.
Samples of the new 4Gb NAND flash memory, the TC58NVG2D4BFT00, will be available in April at a unit price of 12,000 yen. Mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units.
Toshiba also announced an 8Gb NAND flash memory IC (TH58NVG3D4BFT00) that stacks two of the 4Gb NAND flash memories in a single package. Stacking the new 4Gb NAND flash memories in a single TSOP (Thin Small Outline Package) opens the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturization.
Toshiba also plans to introduce in the third quarter of 2004 a sample of 16Gb NAND flash memory IC that stacks four of the 4Gb NAND flash memories in a single package.
The 4Gb NAND flash memory was developed by Toshiba and SanDisk Corp, under their 1999 comprehensive agreement on joint development of NAND flash memory. The new chips will be produced with 90-nanometer process technology at the NAND flash facility at Toshiba's Yokkaichi Operations in Japan, which is operated by Flash Vision Japan, the joint venture between Toshiba and SanDisk. Yokkaichi Operations is also the site of the new 300mm wafer fabrication facility that Toshiba will start to construct this month in order to meet the fast-growing demand for NAND flash memory. Mass production of NAND flash memory at the 300mm fab in Yokkaichi is expected to start in the second half of 2005.
By: DocMemory
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