Toshiba will roll out a combo of 1.8 volt burst-mode pseudo SRAM and burst-mode NOR flash in the third quarter for use in advanced mobile phones.

The transition to a burst interface has been expected, but Toshiba is the first to get one out the door for the 128-Mbit density pseudo SRAM. Toshiba is aiming the burst interface squarely at the 3G market and the multimedia content that often causes spikes in read/write demand, such as video playback and gaming.

Researchers iSuppli Corp. believes pseudo SRAMs accounted for 13 percent of the SRAM market last year, or $322 million in sales, and says there is plenty of growth opportunity as cellphone sales grow to 640 million units in 2007 and designers try to meet the dual demands of tight power budgets and rising applications.

The burst mode PSRAM (TC51YNM716AXBN) comes in a 128 megabit density and offers a standby mode requiring 200 microamps (A) of current, along with a synchronous burst function with selectable burst length of 1 to 64 words. It's organized as 8 Mwords x 16-bits, with an 8-word page operation. The device's SRAM-like read-write timing in asynchronous mode is controlled by the chip enable, output enable and write-enable inputs.

By: DocMemory
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