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Mosaid, take DLL patent out of dispute


Tuesday, May 25, 2004
Mosaid Technologies Inc. has filed a proposed Stipulated Order of Dismissal for all infringement claims with respect to U.S. Patent No. 6,067,272 covering a Delay Locked Loop (DLL) circuit for use in Synchronous DRAM.

This order was filed with the consent of both Infineon and Mosaid and effectively removes the DLL patent from the current litigation.

As a result Mosaid is precluded from reasserting the DLL patent against Infineon until the conclusion of the current litigation. With the removal of the DLL patent from the Infineon litigation, the remaining nine patents are common to Mosaid's litigation with both Samsung and Infineon.

"We have decided to remove the DLL patent from our case against Infineon to avoid delays in the litigation process which would result from the requirement for separate fact discovery and claim construction proceedings relating to the DLL," said George Cwynar, president and chief executive officer for Mosaid, in a statement. "We continue to believe in the strength of our infringement case against Infineon with the nine patents at issue."

In 2001, Mosaid filed a DRAM patent lawsuit against South Korea's Samsung. The suit covered a range of U.S. patents dealing with basic inventions and fundamental technologies required for dynamic RAMs, according to the Ottawa company.

Mosaid filed a suit against Infineon for infringement of seven of its patents in February 2003, with additional patents were added to the dispute subsequently.

By: Docmemory
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