Micron Technology has just announced to enter the NAND flash market by the end of this year with a 2Gbit device made on a 90nm process.

"Micron plans to break into the market as one of the top three suppliers," said Jan du Preez, Micron¡¦s VP of networking and communication. "Micron is entering the NAND market aggressively, starting with the introduction of our first device on 90nm followed by process migrations to 72nm and then 58nm. Our NAND roadmap reflects multiple configurations and density migrations up to 16Gbit. We anticipate ramping production quickly to meet the forecasted market demand."

Earlier this year Micron said it had taped out the 90nm 2Gbit device in November. Normally a three-month gap between tape-out and sampling is expected in the semiconductor industry.

NAND flash is expected by Gartner Dataquest to be a $5 billion market next year, projected to grow to $10 billion in 2008. It is dominated by Samsung and Toshiba. Renesas is also a significant player. Companies that have recently entered, or announced an intention to enter the NAND market include Intel, STMicroelectronics in partnership with Hynix, Infineon, Powerchip Semiconductor of Taiwan, and FASL (Fujitsu AMD Semiconductor Ltd.).

By: DocMemory
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