Thursday, September 9, 2004
Taiwan Semiconductor Manufacturing Company (TSMC) with three local academic institutions to co-develop next-generation memory technology, magnetoresistive RAM (MRAM), according to the Industrial Technology Research Institute (ITRI).
ITRI said the other three academic institutes are National Yunlin University of Science and Technology, National Changhua University of Education, and National Chung Cheng University, which they will work on chip designs, while TSMC will help them produce the proto-type wafer.
Lien-chang Wang, an engineering manager at the Electronics Research and Service Organization (ERSO) of ITRI said the MRAM provide faster writing speed and the data could be retain when power off. In addition to MRAM, other non-volatile, next-generation memory types including FRAM, holographic memory, ovonic unified memory, molecular memory, nanotube RAM, MEMS-based memory and polymer memory are in the development phase.
The MRAM market is expected to grow from US$2 million in 2004 to US$3.8 billion in 2008, and to US$12.9 billion by 2011, according to the report from research firm NanoMarket LC.
By: DocMemory
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