Yesterday marked another first for the semiconductor industry, this time the beginning of mass production in Seoul, South Korea, for 512Mbit DDR SDRAM chips on 300mm wafers using a 90nm process.

This achievement was accomplished by Samsung Electronics Co. Ltd., which began its foray into 90nm production last year when it began fabricating 2Gbit NAND flash memory, the migration to which boosted production by 40 percent over 0.10-micron process technology.

The company said the key to the success of its 90nm process technology is the short wave length Argon Fluoride light source that enables the finer circuitry, high dielectric Alumina Hafnium Oxide to be applied within the capacitor for enhanced data storage characteristics, combined with its three-dimensional transistor circuitry, Recessed Channel Array Transistor, which reinforces the capacitors¡¯ data retaining features enhancing the refresh cycles.

The DRAM market is expected to transition from 256Mbits to 512Mbits as the memory industry mainstay density in the second half of this year, with 512Mbits densities to reach $13 billion next year, according to Gartner Dataquest.

Samsung¡¯s 90nm 512Mbit DDR SDRAM with voltage rates of 2.5V is available at both 400MHz and 333MHz.

By: DocMemory
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