Monday, September 13, 2004
NEC Electronics announced that it has developed a new Advanced Memory Buffer (AMB) device for use in fully buffered dual-inline memory modules (FB-DIMMs).
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| Advanced Memory Buffer-compliant, system-on-chip, uPD720900 | Developed in collaboration with Intel and fully compliant with the AMB standard ratified by JEDEC, the AMB is a key enabling technology behind the increased bandwidths and large memory capacities characteristic of emerging FB-DIMM products. The AMB device helps bring new levels of memory performance to demanding applications such as servers, routers and graphics controllers.
The AMB interface is responsible for handling FB-DIMM channel and memory requests to and from the local DIMM and for forwarding the requests to other DIMMs. Compared to existing registered DIMM technology, FB-DIMMs provide memory capacities up to 24 times higher -- 192GB vs. 8GB -- and bandwidth up to four times faster -- 40GB/s vs. 10GB/s -- when used with 1Gb x 4-bit DDRII-800 DRAM. FB-DIMM technology also uses low-signal pins and only 69 pins per channel, whereas existing DIMMs need 240 pins per channel. Accordingly, because FB-DIMMs require a high-performance memory buffer, the AMB's unique channel structure mitigates buffer latency issues typical in registered DIMM technology.
The company showcased its AMB technology at the Intel Developer Forum (IDF) Fall 2004 in San Francisco.
NEC Electronics currently has samples available for its standalone AMB. Mass production is expected to begin in Q4 2004, with prices starting at US$25 each in 10,000-unit quantities. The AMB also is currently available as an IP core to NEC Electronics' ASIC customers
By: DocMemory
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