For 200mm and 300mm manufacturing, Chartered is already engaging with customers on its 0.13micron and 0.11micron solutions, as well as on the 90nm cross-foundry platform that will be available at both Chartered's Singapore-based Fab 7 and IBM's East Fishkill, New York fab.

Customers are utilizing Chartered's 0.13micron solutions from Fab 6, a 200mm facility, to deliver a broad variety of leading-edge and next-generation system-on-chip (SoC) products, such as high-performance graphics chips, storage and networking products, wireless local area network (WLAN) products, PC peripherals and optical drives.

Additionally, Chartered is offering its 0.11micron process as an intermediary node to 0.13micron from its Fab 6 and Fab 7. Chartered's 0.11micron process offerings are achieved with a 10% shrink of Chartered's 0.13micron design rule, and therefore reduce implementation risks while lowering the cost per die. Chartered's 0.11micron solutions support faster speed and enhanced performance, and are targeted for today's fast-moving products such as graphic chips, optical drives and high-speed SRAMs.

And as part of the joint development and reciprocal manufacturing agreement between Chartered and IBM, a team of IBM technical experts are in Singapore to transfer the jointly developed 90nm technology from IBM's 300mm facility in East Fishkill, New York. The teams from Chartered and IBM are also working together to qualify the equipment set at Fab 7, and align Fab 7's equipment configuration and process flow with those at IBM's facility to enable the industry's first dual-source 90nm platform. Following the launch of 90nm engineering wafers, Fab 7 remains on schedule to manufacture 90nm silicon-on-insulator (SOI) products for IBM in mid-2005, with Chartered becoming the only dedicated foundry to have advanced SOI capabilities.

By: DocMemory
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