Samsung said it has achieved development breakthrough of the world's first 2Gb DDR2 SDRAM using existing, 80-nanometer micro-processing technology.

The high density DDR2 chip will enhance server and workstation performance and enable faster deployment of memory-intensive applications such as real-time video conferences, remote medical services, two-way communications and 3-D graphics, it said.

It was widely believed in the industry that the development of such a high-capacity memory chip would be possible only by using processing technology on a scale of 65 nanometers or less.

"This development has shown that the expansion of semiconductor capacity is also possible by improving design and process technology, rather than micro-process technology alone," Hwang Chang-Gyu, president of Samsung Electronics's semiconductor division, told journalists.

Market research firm, Gartner Dataquest, forecasts that DDR2 technology's market share will grow from 11 percent this year to 50 percent by the end of 2005, making DDR2 the mainstream DRAM product.

Samsung plans to launch mass production of the 80-nano process, 2Gb DDR2 SDRAMs in the second half of 2005.

By: DocMemory
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