Monday, September 27, 2004
Hynix Semiconductor Inc. (Seoul) and ProMOS Technologies (Hsinchu City, Taiwan) said Monday (September 27) they expect to sign a definitive agreement on stacked DRAM technology.
Under the proposed agreement, ProMOS would license Hynix's stacked capacitor DRAM technology to enter that market. In turn, Hynix would utilize the foundry services of ProMOS.
Both companies started a relationship on last December, after ProMos abandoned a proposed relationship with Elpida Memory. The proposed agreement also calls for both companies to undertake future joint development activities.
ProMOS presently manufactures high-performance and high-density commodity DRAM memory chips and other niche memory products, including pseudo-SRAM, low power SDRAM and MCM products.
The company owns and operates one 8-inch (200 mm) fab and one 12-inch (300 mm) fab, utilizing 0.14-micron and 0.12-micron process technology for volume production.
By: DocMemory
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