Monday, October 4, 2004
Samsung Electronics announced that it has developed an 8G-bit NAND-type flash memory chip with a 60-nano design rule.
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| Samsung announced that it has developed an 8G-bit NAND-type flash memory chip with a 60-nano design rule | The company also announced that it has developed what it claims is the world's first 2G-bit double-data-rate (DDR) dynamic random access memory (DRAM) chip with an 80-nano design rule.
Hwang Chang-gyu, president of Samsung Electronics' Semiconductor Division, said, "So-called fusion memory will be a growth engine for the company in the memory and system LSI markets."
The success in the use of 80-nano technology for new DDR DRAM chip development is a breakthrough in the semiconductor industry, which views technology on a scale of 65 nanometers or less as the core of 2G-bit DRAM production.
Hwang expressed optimism that the company will sell more DRAMs than expected in 2004 because of a pick-up in memory-chip prices in the fourth quarter, adding that global sales of NAND-type flash memory chips will double in 2005 to 1.8 billion units from 900 million units in 2004.
By: DocMemory
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