Wednesday, October 27, 2004
Texas Instruments Inc. plans to break ground mid-November on a $3 billion wafer fab complex for processing 300-mm diameter wafers in Richardson, Texas..
The move confirms earlier reports that Texas Instruments planned to bring the start of construction forward from 2005 to some time before the end of 2004.
No timescale was given for completion of what is believed will become TI's DMOS7 wafer fab.
The 92-acre site, announced as the planned location in June 2003, is expected to cost $3 billion over a multi-year period and to employ up to 1,000 people when fully staffed.
TI intends to build chips using 65-nanometer (nm) manufacturing process technology on 300-mm silicon wafers when the facility's clean room is completed, the company said.
By: DocMemory
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