Samsung Electronics Co. Ltd. today announced the successful development of a 90nm, 1Gbit OneNAND flash memory device aimed squarely at the mobile market.

Samsung¡¯s device uses a unified storage concept, which combines the high-speed data read function of NOR flash and the advanced data storage of NAND flash, but the single chip is based on NAND architecture integrating buffer memory and logic interface, the company said.

The device also contains a 66MHz synchronous interface and cache read function that is meant to allow enhanced read performance of 108Mbytes/sec. and a four-fold read speed increase over conventional NAND flash that resolves delay time in copying boot code from the NAND flash to the DRAM, thereby executing applications on-demand, Samsung said.

With continuous multi-shot capability limited to DRAM buffer size, Samsung¡¯s OneNAND allows 10Mbytes/sec. of write speed, to make it possible to directly write into the total flash memory space without the need for DRAM buffering, Samsung boasted, adding that that is meant to allow for continuous, multi-shot capturing of 5-megapixel images and real-time recording of VGA resolution video.

Security features of the device include an OTP block integrated into its design to prevent forgery, in addition to a lock function for the memory block unit to protect the operating system from viruses.

The OneNAND is being sold separately or mounted with a mobile SDRAM in a multi-chip package (MCP). Samsung suggests two 1Gbit OneNAND flash and one mobile SDRAM in a three-chip MCP could be applied to a 3G mobile handset application.

Samsung also offers operating software, an interface to RTOS file systems, all respective device drivers and software development tools.

This week, Spansion also announced a similar-sounding flash product, which combines aspects of NOR and NAND-type flash memory.

By: DocMemory
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