Wednesday, November 17, 2004
ST Microelectronics and Hynix Semiconductor announced they would build a front-end memory-manufacturing facility in Wuxi City, Jiangsu Province, China.
The total investment for the project is planned to be $2 billion, financed by Hynix at 67 percent and ST’s contribution at 33 percent. ST will also contribute $250 million of long-term debt, as well as a financing package from Chinese financial institutions. The companies expect to invest approximately $375 million in 2005 toward this venture.
The facility, to be dedicated to DRAM and NAND flash production, is to include an 8-inch wafer line scheduled to begin volume production in 2006, while a 12-inch manufacturing line would begin volume production in 2007.
Construction is slated to begin early next year on the fab, to include cleanroom space of more than 18,000 square meters, employing about 1,500 people.
By: DocMemory
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