Monday, December 6, 2004
Samsung Electronics announced the next-generation memory module, a 1GB fully buffered, dual in-line memory module (FB DIMM) based on DDR2 technology. FB DIMM, a new design that resolves the limited memory performance of conventional registered DIMMs, is said to sharply boost memory density and bandwidth to improve data processing in servers and workstations.
Currently, the memory slot access rate per channel decreases as the memory bus speed increases, resulting in limited density build-up as channel speeds increase. The FB DIMM eliminates this “stub-bus” channel bottleneck by using point-to-point links that enable multiple memory modules to be connected serially to a given channel.
A memory buffer chip is added to each module to enable the use of high and low speed interfaces. The buffer can generate speeds of 3.2Gbps to 4.8Gbps, six-times that of the DRAM.
Samsung will begin mass production of FB DIMMs in the first half of 2005 to meet early market demand for the technology.
By: DocMemory
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