Infineon Technologies has presented its 70-nanometer device architecture and manufacturing process for future 300mm DRAM based on deep trench cells at a conference held in San Francisco.

Infineon believes the trench technique would help increase productivity of 300mm DRAM manufacturing as well as DRAM output because of smaller process structures that allow a 30 percent reduction in chip size and hence increasing chip output per wafer.

The 70-nm process is expected to come into production by 2007 when demand is expected to grow for DDR3 memories, the company said.

Infineon is currently running most of its DRAM production on 110-nm process technology and introducing DDR devices on 90-nm process technology with plans to ramp volumes by mid 2005. The paper presented at the conference is based on the joint development work of Infineon and Nanya covering 90-nm and 70-nm DRAM development.

By: DocMemory
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