Boise, Idaho-based Micron Technology Inc. said today it began shipping 2 Gigabit (Gbit) NAND flash memory to address demand for increased memory in mobile and mass storage applications such as flash cards, USB devices, mass storage devices and mobile applications.

With the NAND segment the fastest growing in the memory market, projected to be $7 billion in 2004 and $8.7 billion in 2005, according to Web-Feet Research Inc., Micron said it has been able to leverage its experience in DRAM process technology to support NAND flash customers. It has moved from initial design to production volumes in 18 months on an advanced process node.

Achim Hill, Micron’s senior director of mobile memory marketing said in a statement, “To enable our customers to quickly ramp their product development…and with process migration plans from 90nm to 72nm and 58nm, our roadmap will continue to reflect the configurations, densities, packaging and tools to support our customers' next generation products.”

The 2Gbit NAND flash memory is manufactured on a 90nm process verified with many major NAND controllers to be drop-in compatible with existing 2Gbit NAND devices utilizing those controllers.

To aid with product design, software reference code and simulation models are available.

The NAND flash is currently in volume production with increasing production volumes anticipated throughout 2005.

By: DocMemory
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