Thursday, February 17, 2005
South Korean chip giant Samsung Electronics Co. Ltd. said Thursday (Feb. 17) it has finished work on a prototype DDR3 DRAM memory prototype.
The 512-Mbit device, which is due to enter volume production in 2006, operates from a 1.5 volts supply and can transfer data at up to 1,066-Mbits per second. That's twice as fast as DDR2, which is just coming into the market in volume, and four times the speed of DDR.
Samsung said it plans to make the chips using an 80 nanometer manufacturing process and, citing data from research house IDC, believes DDR3 will account for 65 percent of the market in 2009.
By: DocMemory
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