Samsung is expected to remain the leader in the NAND-based flash-memory market in 2005 and 2006, with Toshiba/SanDisk in the second place. But Hynix/STMicroelectronics, Infineon, and Micron will experience the fastest growth in the business, according to projected rankings from RBC Capital Markets Inc.

While Samsung and Toshiba/Sandisk's shipments for 2005 are projected to jump a 130 percent and 141 percent respectively, the new players in NAND including Micron, Infineon, and Hynix/STMicroelectronics, are projected to see overall NAND bit growth rates of a staggering 7,191 percent, 440 percent, and 332 percent, respectively, according to RBC, an investment banking firm.

"Samsung is currently producing 4-Gb binary at 90-nm on 300-mm wafers. Toshiba/SanDisk is currently producing 4-Gb MLC at 90-nm on 200-mm wafers. Toshiba/SanDisk will introduce 8-Gb MLC on 70-nm as well as being on a 300-mm production schedule for 2H:05," the company said.

"It appears that the majority of new suppliers will be entering with 512-Mb/1-Gb offerings targeted at the OEM market while Micron is expected to introduce a 2-Gbit solution shortly," the company added.

By: DocMemory
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