Tuesday, March 29, 2005
Singapore's Chartered Semiconductor Manufacturing Pte. Ltd. on Monday (March 28) outlined its new "value-added" foundry solutions, including a silicon germanium (SiGe) process.
Available immediately, Chartered offers fully qualified 0.35- and 0.18-micron SiGe BiCMOS processes for a range of applications. Chartered's 0.35-micron SiGe BiCMOS process is able to achieve peak fT of 50-GHz and peak fmax of 60-GHz, according to Chartered.
"Both the peak fT and peak fmax of the 0.18-micron SiGe BiCMOS process are able to reach 100-GHz," according to the company. "The processes feature stacked MIM capacitors with density of 4 fF/micron2, 4-micron thick top metal inductors and hyper-abrupt varactors."
The foundry provider also announced new processes for high-voltage and non-volatile memory applications. Based on 0.35- and 0.18-micron technologies, Chartered's high-voltage processes are optimized for a broad range of flat-panel display driver requirements.
Targeting RFID products and MCUs for a range of consumer and industrial products, Chartered offers three versions of non-volatile solutions: EEPROM; one-time programmable (OTP) and MTP blocks; and silicon-oxide-nitride-oxide-silicon (SONOS) flash memory block.
The 0.35-micron EEPROM and OTP solutions are in volume production today at Chartered. The company also expects to offer customers fully qualified 0.25-micron and 0.18-micron MTP solutions by the first half of 2005 and fully qualified 0.18-micron SONOS flash solution by the third quarter of 2005.
By: DocMemory
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