Friday, April 8, 2005
Intel said that it has developed a line of NOR-type flash memory devices optimized for code storage in embedded systems.
The P30 flash line is manufactured using 0.13-micron process and based on Intel's StrataFlash multi-level cell technology, Intel said. The differences in P30 than its predecessors are its support for I/O voltages that range from 1.7 to 3.6 Volts, and packaging in the TSOP and ezBGA package types that are not used in the handset market.
The P30 products also includes on-chip security features, including four pre-defined 128-KByte areas in the main flash array that can be made to be one-time-programmable only.
The embedded flash chips begin shipping this quarter, at densities ranging from 64- to 512-Mbits. A 1-gigabit device will be available in the second half of this year.
By: DocMemory
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