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Elpida produce high speed DDR2 on 90nm


Thursday, April 21, 2005

Tokyo-based Elpida Memory Inc. has commenced production of DDR2 SDRAM on an advanced 90nm process at its Hiroshima E300 facility, the company reported today.

The 90nm process allows Elpida to manufacture 512Mbit DDR2 SDRAM devices with chip sizes as small as 69.9 mm2, allowing more devices per wafer for increased unit output.

“Elpida continuously leverages its strength in manufacturing and process technology to create substantial improvements in our capacity and production yield of high-performance DRAM products,” said Yukio Sakamoto, president and CEO of Elpida, in a statement.

“Our ability to begin DDR2 SDRAM production at 90nm will help Elpida meet growing industry demand for high-density, high-speed DRAM such as DDR2-533 and DDR2-667,” he added.

Until now, Elpida had been producing its 512Mbit density devices on its 100nm process. The 90nm technology was developed to allow Elpida to offer high-performance DRAM products needed by the server and high-end PC markets, the company explained.

Sample products are to be available in June with volume production anticipated for Elpida's fiscal Q2, ending March 31, 2006.

By: DocMemory
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