Tuesday, May 31, 2005
Samsung Electronics Co. Ltd. said it has started mass producing a 4-Gbit NAND flash device made on a 70-nanometer manufacturing process technology.
Samsung's 4-Gbit NAND flash memory was first developed in September 2003 but the move to the use of a 70-nm manufacturing process enables Samsung to produce the industry's smallest memory cell size, the company said.
As a consequence Samsung's 70-nm 4-Gbit NAND flash writes data at 16-Mbytes per second, a 50 percent enhancement over a 90-nm 2-Gbit device, thereby enabling real time data storage of high-definition video images. Samsung also announced the first wafer-out at its new 300-mm wafer fabrication line, one month ahead of schedule. Samsung's Line 14, initially will produce 4,000 wafer starts per month and gradually ramp up to 15,000 wafer starts per month by the end of 2005. Line 14 produces 70-nm 4-Gbit NAND and 90-nm 2-Gbit NAND flash memory.
By: DocMemory
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