Infineon (Munich, Germany) said that, together with Nanya (Taoyuan, Taiwan), it has qualified the jointly-developed 90-nanometer DRAM technology and that both companies have qualified 90-nm memory products at major customers including Intel Corp.

By the end of May Infineon had converted about 5 percent of its DRAM production from 110-nm to 90-nm, the company said. Inotera Memories, the Taiwan-based manufacturing joint venture of Infineon and Nanya is starting the 90-nm transition now, it added.

"With the qualification of advanced DRAM products on 90-nm process technology we have achieved a major milestone towards product and technology leadership and increased DRAM manufacturing productivity," said Andreas von Zitzewitz, head of Infineon's memory products business group, in a statement.

The first product to receive customer qualification is a 512-Mbit DDR SDRAM. The extension of the portfolio with a 512-Mbit DDR2 SDRAM is expected in the second half of 2005, with a variety of other products including 256-Mbit DDR2 and 1-Gbit DDR2 SDRAMs to follow.

The 90-nm process is based on the use of 193-nm wavelength lithography, as was the 110-nm process, Infineon said. The strategic development alliance between Infineon and Nanya also covers the next technology node with 70nm structures.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved