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Honeywell release 1-Mbit rad-hard MRAM specs


Monday, June 6, 2005 Honeywell has posted a data sheet for a 1-Mbit radiation-hard magnetic RAM to its website in the form of a "pdf" file. A source said the Honeywell memory is not a prototype or sample, but a commercial product. However, the specification sheet is labeled "advanced information".

Honeywell is one of a number of companies attempting to develop MRAM products. Cypress Semiconductor Corp. opted to divest itself of its MRAM development subsidiary despite saying it had successfully sampled MRAMs to customers earlier in 2005.

MRAM combines the ability to retain data when power is removed with the fast read and write of RAM and without the system design complexities of battery-backed SRAM, flash or ferrolectric RAM. However, some experts have doubted MRAMs' ability to scale to very small geometries and the technology has been a long time coming from such proponents as Motorola, now Freescale Semiconductor, Altis Semiconductor and Cypress Semiconductor.

The Honeywell 1-Mbit MRAM, organized as 64K by 16-bits, is fabricated in Honeywell's radiation-hardened 150-nanometer silicon-on-insulator manufacturing process technology, and is designed for use in low-voltage systems operating in radiation environments. The MRAM operates over the full military temperature range and is operated with 3.3-V and 1.8-V power supplies, according to the specification sheet.

By: DocMemory
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