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Korean researchers claim memory litho breakthrough, says report


Thursday, June 9, 2005 A team of scientists claims to have developed a method for making next-generation memory chips at dimensions below 50-nanometers, according to a Korea Times report.

The team, from the Korea Advanced Institute of Science and Technology and led by professor Kim Sang-ouk, was reported to have claimed to have found a manufacturing method, which could replace photolithography.

"We developed a synthetic method to create periodic structures at the nanoscale. It will provide a breakthrough technology to produce advanced semiconductors," the report quoted Kim as saying. "Theoretically, we can make a 10-nanometer semiconductor with our new technology. The world's leading companies like IBM are racing to embrace it," the report also quoted Kim as saying.

Kim said he believed his team could cooperate with Samsung to commercialize the technology and develop memory circuits at geometries smaller than 50-nanometers.

Kim has applied for local and international patents for the technology, which is due to be discussed in a forthcoming edition of the journal Science, the report said.

By: DocMemory
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