Samsung Electronics and Hynix Semiconductor will shift more DRAM capacity to NAND flash production by year end, according to sources familiar with the companise.

Samsung has been decreasing its DRAM wafer start since the beginning of this year and now expects to reduce its planned DRAM wafer starts for 2005 by nearly 15%, the sources said.

On the other hand, Hynix has informed its clients that it will decrease its DRAM wafer starts by nearly 20% from this May to year-end, as it ramps up NAND flash production, the sources added.

By: DocMemory
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