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Taiwan DRAM companies allied on Phase Change Memory development


Thursday, July 14, 2005
Powerchip Semiconductor Corp. (PSC), ProMOS, Nanya Technology Corp. and Winbond Electronics Corp. have recently formed an alliance with the Electronics Research and Service Organization at the semi-official Industrial Technology Research Institute (ITRI) to deal with research and development of next-generation technology for DRAM chips, called Phase Change Memory (PCM).
 
The alliance plans to spend a total of NT$120 million on developing PCM technology in the next three years, hoping to secure its position ahead of overseas competitors once the PCM starts to be commercialized and replace DRAM in 2008. PCM's output value is expected to exceed NT$10 billion in 2008 and reach NT$100 billion in 2012, ITRI said. PCM is an advanced technology that features faster reading and reflecting speed, more power savings and bigger storage in smaller sizes than the current DRAM chips.
 
Meanwhile, PSC, Nanya and ProMOS had already raised substantial amount of money to a total of NT$43.5 billion for expansions in the first half of the year, which will be spent on expansions at their 300-mm silicon-wafer foundry plants at a time when business is picking up. PSC plans to boost output capacity to 30,000 to 35,000 wafers a month at its 300-mm wafer fab at yearend from current 20,000 to 25,000 wafers. ProMos Technologies plans its capital expenditure for this year at US$800 million as the company schedule to ship DDR 2 in the fourth quarter. Nanya plans to boost its output of DDR2 chips to account for around 70% of its total output at yearend from current 20% or so. The company has raised NT$10.4 billion by issuing unsecured debentures and plan to raise NT$8 billion in the second half of the year.

By: DocMemory
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