Tuesday, August 23, 2005
Hoping to get a jump on its rivals, Japanese DRAM maker Elpida Memory Inc. on Tuesday (August 23) claimed that it has developed a next-generation, 512-megabit SDRAM, based on double-data-rate 3 (DDR3) technology.
Micron, Samsung and other DRAM makers are also developing DDR3 SDRAMs. The new DDR3 architecture is expected to feature a data transfer rate of up to 1333-megabits per second (Mbps), double the speed of the DDR2 architecture currently in volume production.
Based on 90-nm process technology, Elpida's 512-Mbit DDR3 device is expected to ship as customer samples by the end of 2005. Initial production is anticipated for 2006. Elpida also plans to develop higher density DDR3 products such as 1- and 2-gigabit devices.
The company’s device incorporates "dual-gate" transistor technology. This technology suppresses the leakage current in the DRAM device, according to Elpida. It will also provide improved power consumption--1.5 Volt verses the 1.8 Volt operation--that is currently available in DDR2 architecture.
"The goal when developing next-generation DDR3 memory is for it to maintain the benefits of DDR2, such as low-voltage operation, while significantly boosting the speed," said Jun Kitano, director of technical marketing for Elpida’s U.S. sales arm, in a statement.
“Our use of 'dual gate' transistors--a first in DRAM--will allow our new 512-megabit DDR3 device to achieve the high-performance operation that will be critical for future advanced computing applications," he said.
By: DocMemory
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