The CellularRAM work group today announced the addition of Hynix Semiconductor, NanoAmp Solutions and Winbond Electronics to its membership.

The new members will join Cypress Semiconductor, Infineon Technologies and Micron as they work to create common specifications for high-performance pseudo-SRAM (PSRAM) devices designed for 2.5G and 3G handset designs.

"With Hynix, Winbond, and NanoAmp Solutions joining Cypress, Infineon, and Micron, all of the major semiconductor manufacturing regions are now represented by co-developers of the CellularRAM specification," said Adrienne Downey, senior analyst at Semico Research Corp., in a statement today. "This is significant because it clearly shows that the CellularRAM specification has gained strong momentum as the ubiquitous solution for PSRAMs in mobile phones."

The CellularRAM work group has developed three generations of specifications for high-bandwidth devices ranging in densities of 16Mbits to 256Mbits. The group is currently working on a fourth generation specification.

CellularRAM devices are currently available