Monday, August 29, 2005
During last week's Intel Developer Forum (IDF) in San Francisco, Infineon Technologies AG announced that it is sampling the industry's only Double Data Rate 2 (DDR2) Fully Buffered Dual-In-line Memory Modules (FB-DIMMs) with all key components designed and manufactured by a single DRAM supplier.
Available in densities ranging from 512MB to 4GB, the new FB-DIMMs are based on an Advanced Memory Buffer (AMB) chip, DDR2 DRAM chips and a proprietary heatsink, all sourced from Infineon.
According to Michael Buckermann, head of the business unit computing of Infineon's Memory Products Group, optimal production of the new modules requires innovation in three areas—high-density and high-speed DDR2 DRAM, the AMB chip, and heatsink. "Infineon's full control of component and module production provides server manufacturers with a mature quality product and enables a smooth implementation of optimally aligned FB-DIMMs, as the technology is adopted to begin replacing registered DIMMs in high-end server systems from 2006 onwards," said Buckermann.
The AMB complex logic chip offers a data rate of 4.8Gbps as a high-speed link interfacing directly with the DDR2 DRAMs, which have speed grades of up to 800Mbps for this first generation. In addition to using it for its own modules, Infineon also delivers the AMB chip to other FB-DIMM manufacturers.
Customer samples of FB-DIMMs with densities of 512MB, 1GB, 2GB and 4GB based on 512Mb and 1Gb DDR2 533 and DDR2 667 components are already available. Volume production is planned for Q4 of 2005. Meanwhile, the AMB chip with a data rate of up to 4.8Gbps is offered in a 665-ball, flip-chip BGA package, and is available in sample quantities.
By: Docmemory
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