Tuesday, September 6, 2005
Samsung Electronics Co. Ltd. has developed a 256-Mbit pseudostatic RAM using a 90-nanometer manufacturing process technology, which it claims is the industry's first.
A pseudo-static RAM is essentially a DRAM with circuitry to keep the core refreshed like a static-RAM with the interface of an SRAM or NOR flash memory device. Samsung describes its device as a unitransistor RAM, or UtRAM.
The 256-Mbit UtRAM operates at a clock frequency of 133-MHz and is available as a stand-alone device or as a key component within multi-chip packages (MCPs).
The company said it will provide the first samples to mobile phone manufacturers later this month with mass production beginning at the end of 2005.
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