Samsung Electronics has developed the "UtRAM," the industry's first 256 Mb pseudo SRAM. Key applications are expected to be such high function mobile products as third-generation mobile phones. Its operation at 133 MHz is 1.7 times faster compared to the 80 MHz of existing pseudo SRAM products.

The memory chip is manufactured using a 90 nm semiconductor process technology. Samsung plans to start sample shipments to mobile phone handset manufacturers in late September 2005, and commence volume production and shipments at the end of 2005. The product will be shipped as a single unit package or an embedded chip in a multi-chip package (MCP).

Pseudo SRAM is low power memory technology, which uses DRAM memory cells despite a SRAM-compatible interface. The electric specifications of the company's 256 Mb UtRAM product are based on the pseudo SRAM format supporting burst transfer, standardized by the Joint Electron Device Engineering Council (JEDEC), a US organization promoting technology standardization.

By: DocMemory
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