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Samsung moved 512Mbit DDR2 to 70nm process


Friday, October 14, 2005

Samsung Electronics said that it has completed development of a 512Mbit DDR2 SDRAM using 70nm processing. 

The new 70nm technology yielded at least 100 percent more chips than could be obtained with 90nm technology, Samsung claimed.

Samsung¡¦s aggressive climb in DRAM implementation has seen the company move 10nm a year. Its introduction of 90nm process in mid-2004 was followed by 80nm in the second half of 2005, and the 70nm process technology is scheduled to be used in production beginning in the second half of 2006 for 512Mbit, 1Gbit and 2Gbit densities.

By: DocMemory
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