Elpida said it had developed the 512-Mbit DDR3 SDRAM in August for fabrication using 90-nm manufacturing process technology had and completed internal verification of its gigahertz-level operation. The devices achieve data transfer rates of 1066-Mbits per second, nearly double the speed of DDR2-based devices.

Elpida is offering samples of the chip to undisclosed customers and samples of the DIMMs to Intel.

Elpida has built 512-Mbyte and 1-Gbyte DIMMs, which are unbuffered for PC applications, and they are the same size and form-factor as the current-generation DDR2-based DIMMs. They also have 1.5-V operation and 17 percent reduction in power consumption versus DDR2 DIMMs.

New features that were implemented in the DDR3 specification such as auto-calibration on the output buffer for high speed interface operation and interrupt reset for system flexibility can be verified on a system, the company said.

"The availability of these samples allows systems developers such as Intel to evaluate new features and gigahertz-class performance across all DIMM sockets on the motherboard with the memory controller and the processor," said Jun Kitano, director of technical marketing for Elpida Memory in the U.S., in a statement.

Volume production would begin in accordance with market demand, Elpida said.

Infineon Technologies AG started sampling a working DDR3 prototype to Intel in June.

By: DocMemory
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