ProMOS, a supplier of DRAMs, held the ceremony for its 300-mm Fab 3 plant in the Central Science Park in Taichung. The company’s first 300-mm fab is located in Hsinchu.

“The newly inaugurated 300-mm fab is Taiwan’s first 300-mm DRAM fab to deploy 90-nanometer technology in mass production of 512-Mbits DDR1 and DDR2,” said M. L. Chen, chairman and president of ProMOS, in a statement.

“After achieving impressive yield results in July and August, we have decided to accelerate start-up schedule such that the production level will reach 30,000 wafers per month by Q3, 2006 and that in turn will allow ProMOS to achieve a bit-growth rate of 80 percent in 2006,” he said.

The fab is expected to be upgraded to 70-nm technology in the fourth quarter of 2006. “The significance of 700nm manufacturing is not just in low cost and higher bit-growth, it will also anchor ProMOS in a much stronger position for R&D activities for 60-nm technology and beyond,” he said.

Construction of a third 300-mm fab is on the same site. It is slated to begin mass production in 2007. Fab 4 will have a monthly capacity of 40,000 wafers and will employ 60-nm technology.

By: DocMemory
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