Saifun (Netanya, Israel) has been licensing NROM technology that stores a bit at each end of the gate of a flash memory cell since 1998. Quad NROM doubles the storage capacity and yet has a simpler architecture that requires fewer manufacturing steps, the company claimed.

The Quad-NROM cell is said to require separate threshold voltages on each side of the cell. Use has been made of software and error correction techniques to improve the programming speed and avoid bit failures.

In addition, the Quad NROM technology cuts out 40 percent of the most difficult fab processes, thereby increasing yield, quality and manufacturing throughput, Saifun said, although it did not say with what it was comparing Quad-NROM.

The advantages are accentuated in the manufacture of multi-chip products where failure in any given die means a memory subsystem may have to be scrapped, the company added.

After several years developing and licensing out non-volatile memory technology to such companies as Spansion LLC and Infineon Technologies AG Saifun conducted a successful initial public offering of shares in November 2005. Saifun was included on four iterations of the EE Times 60 Emerging Startups list prior to the announcement of its IPO.

By: DocMemory
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