Hitachi Ltd. and Renesas Technology Corp. said today they have successfully prototyped low-power phase-change memory cells with nonvolatile semiconductor storage elements. This latest technology will be a promising solution for on-chip program and data storage in next-generation microcontrollers for embedded applications such as information devices, home electric appliances, and in-vehicle equipment and control systems.

These storage elements can be programmed at a power supply voltage of 1.5V and a low current of 100uA - about 50 percent less power consumption per cell than previous technology reported. As such, the phase-change cells compare favorably with existing nonvolatile memory in terms of high-speed writing and reading capabilities, high programming endurance, small size, and high-level integration, the companies explained

By: DocMemory
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