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ProMos to increase DDR2 output


Friday, January 13, 2006

The recent positive price signals in the DDR2 market has prompted Taiwan DRAM maker ProMOS Technologies to ramp up its related shipment proportion, with company chairman ML Chen indicating that DDR2 output will contribute over 30% to the company’s overall output in the first quarter of 2006.

ProMOS pointed out that over 50% of its wafer starts at its first 12-inch fab (Fab II) currently go to DDR2. Chen noted that this ratio is ahead of the originally planned schedule.

Chen stresses that the ratio of 0.11-micron production at Fab II should continue to increase, offering ProMOS a more competitive DDR2 cost structure.

In addition, in order to fulfill orders for allied partner Hynix Semiconductor’s DDR2, ProMOS will also accelerate the related DDR2 production development at its new Taichung plant, observers commented.

By: DocMemory
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