On March 15, Nanya Technology broke ground at its 12-inch fab located in Linko (northern Taiwan), and trial production runs are slated to begin in the middle of 2007. Nanya president Jih Lien stated that the company will invest NT$83 billion in the 12-inch fab and the planned maximum monthly capacity will be 62,000 wafers.

However, the first phase of construction should take the company through the middle of 2008, by which time the monthly capacity will reach 24,000 wafers, according to Lien.

Combined with its reserved capacity at Inotera Memories – its joint venture with Infineon Technologies – Nanya should be able to capture 10% of the global DRAM market, said Lien.

As reported on March 14, Inotera announced that its combined 12-inch wafer capacity will reach 80,000 wafers per month by 2007, with its second 12-inch fab starting volume production in early 2007.

By: DocMemory
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