Wednesday, April 12, 2006
Nantero Inc., a private company developing a non-volatile memory based on the bi-modal stability of a carbon nanotube matrix laid across an etched trench, has announced it has fabricated and successfully tested a 22-nanometer memory switch.
The NRAM memory from Nantero (Woburn, Mass.) is a rewritable memory device that holds its data content without power, making it a potential universal memory and suitable for numerous applications.
In addition to the R&D work at 22-nm Nantero said it is engaged in the development of NRAM memory chips at technology nodes in use today and this is being conducted in production CMOS fabs. Nantero was working with LSI Logic Corp. as a manufacturing partner prior to LSI Logic’s decision to go fabless.
Nantero NRAM switches have been tested by writing and reading data using 3-ns cycle times, giving it the potential to match the fastest memories in production today, the company claimed. The NRAM switch is covered by U.S. patent 6,706,402 and Nantero said it has over 80 patent applications pending covering multiple aspects of carbon nanotube use in electronics. Of these more than 12 have been granted.
Greg Schmergel, Nantero’s co-founder and CEO, said the results demonstrated that NRAM scaling could continue for many manufacturing process generations even as far down as geometries of 5-nm.
By: DocMemory
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