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ProMos: condition to improve on DDR2 ramping


Thursday, May 4, 2006

While already hinting that it would suffer sharp losses in the first quarter, ProMOS Technologies officially announced that its losses totaled NT$518 million last quarter, a net loss per share of NT$0.11. However, the company anticipates its cost structure will improve this quarter on a growing proportion of DDR2 and 90nm production.

ProMOS indicated its first quarter revenues of NT$7.91 billion were down 4.6% from the same period last year. However, the DRAM maker’s sales grew 12% sequentially, as bit shipment growth at its second 12-inch fab contributed to the rebound.

ProMOS expects to continue increasing output on ramping DDR2 capacity and a continued migration to 90nm production. The company reported that its wafer starts on 90nm node at Fab 3 exceeded 20,000 wafers in April with yields reaching 90%.

Increased 90nm production as well as an increased proportion of DDR2 production at its first 12-inch fab (Fab 3) will reduce ProMOS’ costs this quarter, the company stated.

Among the four major Taiwan DRAM makers – Inotera Memories, Nanya Technology, ProMOS and Powerchip Semiconductor Corporation (PSC) – only ProMOS reported losses in the first quarter.

By: DocMemory
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