Nanosys Inc. has announced that it has expanded its work on memory with Intel Corp. and that Micron Technology Inc. has joined the collaboration.

Nanosys of Palo Alto, Calif. announced in January 2004 that it was working with Intel performing research into chemically- and biologically-sensitive semiconductor materials arranged in nanometer-scale structures including nanowires, nanorods, nanotetrapods, and nanodots, to gauge the potential to create memory devices.

Now Nanosys has announced that it has developed proprietary nanostructures to address high density NAND flash memory opportunities in areas such as consumer electronics, portable storage, and personal communications. The company, which has more than 450 patents and patent applications on nanotechnology, did not disclose the nature of its nanostructures but said that Micron Technology Inc. (Boise, Idaho) has joined the collaboration. Intel and Micron have set up a joint venture company, IM Flash Technologies Inc., to manufacture NAND flash memory for the two companies. Nanosys said its nanotechnology-enabled memory technology is designed to be compatible with current manufacturing processes and equipment, while allowing for higher storage densities, lower cost per bit, and improved reliability.

By: DocMemory
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